JPH0476536B2 - - Google Patents

Info

Publication number
JPH0476536B2
JPH0476536B2 JP60233440A JP23344085A JPH0476536B2 JP H0476536 B2 JPH0476536 B2 JP H0476536B2 JP 60233440 A JP60233440 A JP 60233440A JP 23344085 A JP23344085 A JP 23344085A JP H0476536 B2 JPH0476536 B2 JP H0476536B2
Authority
JP
Japan
Prior art keywords
transistor
field effect
current
output
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60233440A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6294020A (ja
Inventor
Hideki Ninomya
Masaru Maruta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP60233440A priority Critical patent/JPS6294020A/ja
Publication of JPS6294020A publication Critical patent/JPS6294020A/ja
Publication of JPH0476536B2 publication Critical patent/JPH0476536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Electronic Switches (AREA)
JP60233440A 1985-10-21 1985-10-21 半導体集積回路 Granted JPS6294020A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60233440A JPS6294020A (ja) 1985-10-21 1985-10-21 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60233440A JPS6294020A (ja) 1985-10-21 1985-10-21 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS6294020A JPS6294020A (ja) 1987-04-30
JPH0476536B2 true JPH0476536B2 (en]) 1992-12-03

Family

ID=16955075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60233440A Granted JPS6294020A (ja) 1985-10-21 1985-10-21 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS6294020A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2680925B1 (fr) * 1991-08-27 1993-12-17 Sextant Avionique Interrupteur statique a faibles pertes.
GB9800925D0 (en) * 1998-01-17 1998-03-11 Lucas Ind Plc Power switching circuit for use in a power distribution system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303841A (en) * 1979-05-21 1981-12-01 Exxon Research & Engineering Co. VMOS/Bipolar power switch
JPS5693428A (en) * 1979-12-10 1981-07-29 Reliance Electric Co High voltage and large current solid state switching circuit

Also Published As

Publication number Publication date
JPS6294020A (ja) 1987-04-30

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